Microstructural interpretation of Ni ohmic contact on n-type 4H–SiC
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منابع مشابه
High-transparency Ni/Au ohmic contact to p-type GaN
In this study, a very thin Ni/Au bilayer metal film was prepared by electron beam evaporation and thermal alloying to form ohmic contact on p-type GaN film. After thermal alloying, the current– voltage (I – V) characteristic of Ni/Au contact on p-type GaN film exhibited ohmic behavior. The Ni/Au contacts showed a specific contact resistance of 1.7310 V cm at an alloying temperature of 450 °C. I...
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The electrical and structural properties of Hf/Al/Ni/Au (20/100/25/50 nm) ohmic contact to n-GaN are reported in this study. Specific contact resistivities of Hf/Al/Ni/Au based contacts have been investigated as a function of annealing temperature and achieve the lowest value of 1.09×10 Ω·cm after annealing at 650 C in vacuum. A detailed mechanism of ohmic contact formation is discussed. By usi...
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The electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au ~30 nm/100 nm/30 nm/30 nm! multilayer Ohmic contacts to n-GaN ~doping level 5310 cm) were studied. The lowest contact resistivity derived from the annealed contact was rS53.0310 V cm. The contacts were robust and showed high-thermal stability. X-ray diffraction and Auger electron spectroscopy studies were made to invest...
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Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
سال: 2002
ISSN: 0734-211X
DOI: 10.1116/1.1495506